Announcing a new product

A non-volatile memory designed for space constraints and harsh environments in space applications.

This new component with Radhard memory for space applications will be available from Q3/2023.

For pre-orders and more information:

If you want to know more about the product,
contact MSA Components GmbH.

Special features and advantages of
the new Radhard memory MNEMOSYNE

Applications

FPGA configuration memory
Boot/program memory of processors

Key benefits

Space-qualified high-density
configuration/program memory.
Suitable for the most important
high-quality FPGAs, processors.
Makes user’s life easier with functions for:
ECC_flag, error_counter
Miniaturization: low pin count and compact solution
Scalability: 512 Mbit and 1 Gbit are
pin to pin compatible

Performances

Density: 512 Mbit or 1 Gbit
Up to 100 MHz
1.8 V SPI Interface
SPI, dual SPI, QSPI and OSPI modes supported
Embedded ECC
ECC flag, error counter
100,000 P/E cycles
20 years data memory
Software reset and hardware reset pin
Boot configuration: x1, x4, x8
Temperature range: -55°C to +125°C
ITAR free

Radiation tolerance

TID > 100 krad(Si)
SEL LET > 60MeV.cm²/mg
SEU LET > 60 MeV.cm²/mg
SET, SEFI LET > 60 MeV.cm²/mg

Space Qualifications

Up to ESA Class 1,
Up to NASA Level 1,
High durability and reliability,
Flight experience: 3D PLUS experience in
space memory for more than 20 years

What is MNEMOSYNE

MNEMOSYNE - First Design ( Test vehicle ASIC)

MNEMOSYNE is a new non-volatile Radhard memory developed as part of a European project. The ASIC embedded in our module is manufactured in Europe using a 22 nm FDSOI process. This new portfolio of non-volatile memories features a serial or parallel interface, embedded ECC and counters. With memory densities from 128 Mbit to 1 Gbit, MNEMOSYNE modules are compatible with the latest generation of FPGAs and processors.

What to expect

First delivery: September 2023
Space-qualified memory with high configuration density
Best-in-class reliability (data retention, P/E cycles, radiation)
Ease of customer life with additional features for error management strategy
(ECC_flags, error counters)
Scalability (512 Mbit & 1 Gbit are pin to pin compatible)

MNEMOSYNE in comparison
(TID & SEE PERFORMANCE)

Would you like more information about the
new Radhard memory MNEMOSYNE??

Call now

Request callback

Request with specifications

3DMN512M08US4853
and 3DMN1G08US8854

3DMN512M08US4853 or 3DMN1G08US8854 is a high performance 512 Mbit or 1 Gbit non-volatile memory with a serial interface.

The 512 Mbit /1 Gbit memory module seemingly replaces any SPI NOR flash memory by providing a high-speed, low pin count SPI-compatible bus interface with a single 1.8 V power supply. It delivers up to 200 MBps reads and writes over 8 I/O signals at a clock frequency of 100 MHz.

This native latch-up immunized memory, manufactured using an FDSOI process, is radiation tolerant by design. Additional protection against transient effects is provided by an embedded controller with ECC.

In addition, an ECC flag and error counter are provided to assist the user in their error management strategy. These features are helpful in extending the life of the module in the radiation environment.

Why the MNEMOSYNE project was launched
AND FUNDED BY THE EU

Demonstrate new generation radiation-resistant, high-density, non-volatile program memory with serial interface
The independence of European space strategy against U.S., Russian and Chinese actors.
first EU-independent high-density radiation-hardened non-volatile memory (NVM) by leveraging Magnetic RAM (MRAM) technology and the expertise of six key partners specializing in radiation hardening and high-performance components for space applications.

Would you like more information about the new Radhard MNEMOSYNE memory?

If you would like general information about the new radhard memory MNEMOSYNE, please contact our team directly or arrange a callback.

Call MSA Team directly